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Proizvođač
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
520 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.4mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Length
3mm
Height
1mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,09
Each (On a Reel of 3000) (bez PDV-a)
€ 0,112
Each (On a Reel of 3000) (s PDV-om)
3000
€ 0,09
Each (On a Reel of 3000) (bez PDV-a)
€ 0,112
Each (On a Reel of 3000) (s PDV-om)
3000
Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
520 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.4mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Length
3mm
Height
1mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu