Infineon FF300R12KS4HOSA1 Series IGBT Module, 370 A 1200 V, 3-Pin 62MM Module, Panel Mount

RS kataloški broj:: 145-9637robna marka: InfineonProizvođački broj:: FF300R12KS4HOSA1
brand-logo
View all in IGBTs

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Maximum Continuous Collector Current

370 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1950 W

Package Type

62MM Module

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Series

Dimensions

106.4 x 61.4 x 30.9mm

Maximum Operating Temperature

+125 °C

Minimum Operating Temperature

-40 °C

Zemlja podrijetla

Hungary

Detalji o proizvodu

IGBT Modules, Infineon

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

€ 265,00

Each (In a Tray of 10) (bez PDV-a)

€ 331,25

Each (In a Tray of 10) (s PDV-om)

Infineon FF300R12KS4HOSA1 Series IGBT Module, 370 A 1200 V, 3-Pin 62MM Module, Panel Mount

€ 265,00

Each (In a Tray of 10) (bez PDV-a)

€ 331,25

Each (In a Tray of 10) (s PDV-om)

Infineon FF300R12KS4HOSA1 Series IGBT Module, 370 A 1200 V, 3-Pin 62MM Module, Panel Mount
Informacije o stanju skladišta trenutno nisu dostupne.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Maximum Continuous Collector Current

370 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1950 W

Package Type

62MM Module

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Series

Dimensions

106.4 x 61.4 x 30.9mm

Maximum Operating Temperature

+125 °C

Minimum Operating Temperature

-40 °C

Zemlja podrijetla

Hungary

Detalji o proizvodu

IGBT Modules, Infineon

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.