IXYS MID200-12A4 Single IGBT Module, 270 A 1200 V, 5-Pin Y3 DCB, Panel Mount

RS kataloški broj:: 146-1696robna marka: IXYSProizvođački broj:: MID200-12A4
brand-logo
View all in IGBTs

Tehnička dokumentacija

Tehnički podaci

Proizvođač

IXYS

Maximum Continuous Collector Current

270 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

Y3 DCB

Configuration

Single

Mounting Type

Panel Mount

Channel Type

N

Pin Count

5

Transistor Configuration

Single

Dimensions

110 x 62 x 30mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Detalji o proizvodu

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

€ 198,00

komadno (u kutiji od 2) (bez PDV-a)

€ 247,50

komadno (u kutiji od 2) (s PDV-om)

IXYS MID200-12A4 Single IGBT Module, 270 A 1200 V, 5-Pin Y3 DCB, Panel Mount

€ 198,00

komadno (u kutiji od 2) (bez PDV-a)

€ 247,50

komadno (u kutiji od 2) (s PDV-om)

IXYS MID200-12A4 Single IGBT Module, 270 A 1200 V, 5-Pin Y3 DCB, Panel Mount
Informacije o stanju skladišta trenutno nisu dostupne.

Kupujte na veliko

količinajedinična cijenaPo kutija
2 - 8€ 198,00€ 396,00
10+€ 196,00€ 392,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnička dokumentacija

Tehnički podaci

Proizvođač

IXYS

Maximum Continuous Collector Current

270 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

Y3 DCB

Configuration

Single

Mounting Type

Panel Mount

Channel Type

N

Pin Count

5

Transistor Configuration

Single

Dimensions

110 x 62 x 30mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Detalji o proizvodu

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.