IXYS MUBW50-06A7 3 Phase Bridge IGBT Module, 75 A 600 V, 23-Pin, PCB Mount

RS kataloški broj:: 146-1698robna marka: IXYSProizvođački broj:: MUBW50-06A7
brand-logo
Prikaži sve u IGBTs

Tehnička dokumentacija

Tehnički podaci

Proizvođač

IXYS

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Configuration

3 Phase Bridge

Mounting Type

PCB Mount

Channel Type

N

Pin Count

23

Transistor Configuration

3 Phase

Dimensions

107.5 x 45 x 17mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+125 °C

Detalji o proizvodu

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

P.O.A.

IXYS MUBW50-06A7 3 Phase Bridge IGBT Module, 75 A 600 V, 23-Pin, PCB Mount

6

Dostupno u više komada 6
6P.O.A.
12P.O.A.
18P.O.A.
24P.O.A.
30P.O.A.
36P.O.A.
42P.O.A.
48P.O.A.
54P.O.A.
60P.O.A.
66P.O.A.
72P.O.A.
78P.O.A.
84P.O.A.
90P.O.A.

P.O.A.

IXYS MUBW50-06A7 3 Phase Bridge IGBT Module, 75 A 600 V, 23-Pin, PCB Mount
Informacije o stanju skladišta trenutno nisu dostupne.

6

Dostupno u više komada 6
6P.O.A.
12P.O.A.
18P.O.A.
24P.O.A.
30P.O.A.
36P.O.A.
42P.O.A.
48P.O.A.
54P.O.A.
60P.O.A.
66P.O.A.
72P.O.A.
78P.O.A.
84P.O.A.
90P.O.A.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

IXYS

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Configuration

3 Phase Bridge

Mounting Type

PCB Mount

Channel Type

N

Pin Count

23

Transistor Configuration

3 Phase

Dimensions

107.5 x 45 x 17mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+125 °C

Detalji o proizvodu

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više