Dual N-Channel MOSFET, 19 A, 650 V, 3-Pin TO220F onsemi FCPF165N65S3

RS kataloški broj:: 146-4114robna marka: ON SemiconductorProizvođački broj:: FCPF165N65S3L1
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ON Semiconductor

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

650 V

Package Type

TO220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V ac/dc

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

10.3mm

Typical Gate Charge @ Vgs

35 nC @ 10 V

Width

4.6mm

Height

15.7mm

Series

SuperFET III

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalji o proizvodu

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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P.O.A.

Dual N-Channel MOSFET, 19 A, 650 V, 3-Pin TO220F onsemi FCPF165N65S3
Odaberite vrstu pakiranja

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 5.

Proizvodnja -

Dostupno u više komada 5.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

5

Dostupno u više komada 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

Dual N-Channel MOSFET, 19 A, 650 V, 3-Pin TO220F onsemi FCPF165N65S3
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakiranja

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 5.

Proizvodnja -

Dostupno u više komada 5.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

5

Dostupno u više komada 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnička dokumentacija

Tehnički podaci

Proizvođač

ON Semiconductor

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

650 V

Package Type

TO220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V ac/dc

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

10.3mm

Typical Gate Charge @ Vgs

35 nC @ 10 V

Width

4.6mm

Height

15.7mm

Series

SuperFET III

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalji o proizvodu

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more