ON Semiconductor MMBFJ177LT1G P-Channel JFET, Idss 1.5 to 20mA, 3-Pin SOT-23

RS kataloški broj:: 163-0963robna marka: onsemiProizvođački broj:: MMBFJ177LT1G
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

P

Idss Drain-Source Cut-off Current

1.5 to 20mA

Maximum Drain Gate Voltage

25V dc

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

300 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Source Gate On-Capacitance

11pF

Dimensions

3.04 x 1.4 x 1.01mm

Height

1.01mm

Width

1.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

3.04mm

Zemlja podrijetla

China

Detalji o proizvodu

P-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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€ 0,14

Each (On a Reel of 3000) (bez PDV-a)

€ 0,175

Each (On a Reel of 3000) (s PDV-om)

ON Semiconductor MMBFJ177LT1G P-Channel JFET, Idss 1.5 to 20mA, 3-Pin SOT-23

€ 0,14

Each (On a Reel of 3000) (bez PDV-a)

€ 0,175

Each (On a Reel of 3000) (s PDV-om)

ON Semiconductor MMBFJ177LT1G P-Channel JFET, Idss 1.5 to 20mA, 3-Pin SOT-23
Informacije o stanju skladišta trenutno nisu dostupne.

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Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

P

Idss Drain-Source Cut-off Current

1.5 to 20mA

Maximum Drain Gate Voltage

25V dc

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

300 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Source Gate On-Capacitance

11pF

Dimensions

3.04 x 1.4 x 1.01mm

Height

1.01mm

Width

1.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

3.04mm

Zemlja podrijetla

China

Detalji o proizvodu

P-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.