onsemi NGTB40N120FLWG IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

RS kataloški broj:: 124-5387robna marka: ON SemiconductorProizvođački broj:: NGTB40N120FL2WG
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Tehnički podaci

Proizvođač

ON Semiconductor

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

535 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.25 x 5.3 x 21.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Zemlja podrijetla

China

Detalji o proizvodu

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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onsemi NGTB40N120FLWG IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

P.O.A.

onsemi NGTB40N120FLWG IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole
Informacije o stanju skladišta trenutno nisu dostupne.

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Tehnička dokumentacija

Tehnički podaci

Proizvođač

ON Semiconductor

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

535 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.25 x 5.3 x 21.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Zemlja podrijetla

China

Detalji o proizvodu

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.