N-Channel MOSFET, 185 A, 40 V, 8-Pin DFN onsemi NTMFS5C430NTG

RS kataloški broj:: 126-3474robna marka: onsemiProizvođački broj:: NTMFS5C430NT1G
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

N

Maximum Continuous Drain Current

185 A

Maximum Drain Source Voltage

40 V

Series

NTMFS5C430N

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

106 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.1mm

Typical Gate Charge @ Vgs

47 nC @ 10 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalji o proizvodu

N-Channel Power MOSFET, 40V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Informacije o stanju skladišta trenutno nisu dostupne.

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€ 1,50

komadno (u pakiranju od 5) (bez PDV-a)

€ 1,875

komadno (u pakiranju od 5) (s PDV-om)

N-Channel MOSFET, 185 A, 40 V, 8-Pin DFN onsemi NTMFS5C430NTG
Odaberite vrstu pakiranja

€ 1,50

komadno (u pakiranju od 5) (bez PDV-a)

€ 1,875

komadno (u pakiranju od 5) (s PDV-om)

N-Channel MOSFET, 185 A, 40 V, 8-Pin DFN onsemi NTMFS5C430NTG
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakiranja

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnička dokumentacija

Tehnički podaci

Proizvođač

onsemi

Channel Type

N

Maximum Continuous Drain Current

185 A

Maximum Drain Source Voltage

40 V

Series

NTMFS5C430N

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

106 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.1mm

Typical Gate Charge @ Vgs

47 nC @ 10 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalji o proizvodu

N-Channel Power MOSFET, 40V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more