N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH26N60E-T1-GE3

RS kataloški broj:: 124-2251robna marka: VishayProizvođački broj:: SIHH26N60E-T1-GE3
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Package Type

PowerPAK 8 x 8

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

135 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

202 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

8.1mm

Typical Gate Charge @ Vgs

77 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

8.1mm

Forward Diode Voltage

1.2V

Series

E Series

Minimum Operating Temperature

-55 °C

Height

1mm

Zemlja podrijetla

Taiwan, Province Of China

Detalji o proizvodu

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

MOSFET Transistors, Vishay Semiconductor

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€ 7,90

komadno (bez PDV-a)

€ 9,88

komadno (s PDV-om)

N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH26N60E-T1-GE3
Odaberite vrstu pakiranja

€ 7,90

komadno (bez PDV-a)

€ 9,88

komadno (s PDV-om)

N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH26N60E-T1-GE3
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakiranja

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Tehnička dokumentacija

Tehnički podaci

Proizvođač

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Package Type

PowerPAK 8 x 8

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

135 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

202 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

8.1mm

Typical Gate Charge @ Vgs

77 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

8.1mm

Forward Diode Voltage

1.2V

Series

E Series

Minimum Operating Temperature

-55 °C

Height

1mm

Zemlja podrijetla

Taiwan, Province Of China

Detalji o proizvodu

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

MOSFET Transistors, Vishay Semiconductor