Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
15A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
2V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
60ns
Peak Non-Repetitive Forward Surge Current
150A
Detalji o proizvodu
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
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€ 7,00
komadno (bez PDV-a)
€ 8,75
komadno (s PDV-om)
1
€ 7,00
komadno (bez PDV-a)
€ 8,75
komadno (s PDV-om)
1
Kupujte na veliko
količina | jedinična cijena |
---|---|
1 - 9 | € 7,00 |
10 - 49 | € 6,35 |
50 - 99 | € 6,00 |
100 - 249 | € 5,75 |
250+ | € 5,50 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
15A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
2V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
60ns
Peak Non-Repetitive Forward Surge Current
150A
Detalji o proizvodu
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.