P-Channel MOSFET, 16 A, 30 V, 8-Pin SOIC Infineon IRF9317TRPBF

RS kataloški broj:: 827-3916brend: InfineonProizvođački broj:: IRF9317TRPBF
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

31 nC @ 4.5 V, 61 nC @ 10 V

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

Detalji o proizvodu

P-Channel Power MOSFET 30V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Proverite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

RSD 139,779

komadno (u pakovanju od 20) (bez PDV-a)

RSD 167,735

komadno (u pakovanju od 20) (s PDV-om)

P-Channel MOSFET, 16 A, 30 V, 8-Pin SOIC Infineon IRF9317TRPBF
Odaberite vrstu pakovanja

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 20.

Proizvodnja -

Dostupno u više komada 20.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

20

Dostupno u više komada 20
20RSD 2.796
40RSD 5.591
60RSD 8.387
80RSD 11.182
100RSD 10.973
120RSD 13.168
140RSD 15.363
160RSD 17.557
180RSD 19.752
200RSD 21.424
220RSD 23.567
240RSD 25.709
260RSD 27.851
280RSD 29.994
300RSD 32.136

RSD 139,779

komadno (u pakovanju od 20) (bez PDV-a)

RSD 167,735

komadno (u pakovanju od 20) (s PDV-om)

P-Channel MOSFET, 16 A, 30 V, 8-Pin SOIC Infineon IRF9317TRPBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 20.

Proizvodnja -

Dostupno u više komada 20.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

20

Dostupno u više komada 20
20RSD 2.796
40RSD 5.591
60RSD 8.387
80RSD 11.182
100RSD 10.973
120RSD 13.168
140RSD 15.363
160RSD 17.557
180RSD 19.752
200RSD 21.424
220RSD 23.567
240RSD 25.709
260RSD 27.851
280RSD 29.994
300RSD 32.136

Kupujte na veliko

količinaJedinična cenaPo pakovanje
20 - 80RSD 139,779RSD 2.796
100 - 180RSD 109,733RSD 2.195
200 - 480RSD 107,121RSD 2.142
500 - 980RSD 104,508RSD 2.090
1000+RSD 100,589RSD 2.012

Zamisliti. Stvoriti. Surađivati

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  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

31 nC @ 4.5 V, 61 nC @ 10 V

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

Detalji o proizvodu

P-Channel Power MOSFET 30V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više