Tehnička dokumentacija
Tehnički podaci
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
25 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
15 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.7mm
Width
4.826mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
16.51mm
Detalji o proizvodu
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 326,587
komadno (u pakovanju od 5) (bez PDV-a)
RSD 391,904
komadno (u pakovanju od 5) (s PDV-om)
5
RSD 326,587
komadno (u pakovanju od 5) (bez PDV-a)
RSD 391,904
komadno (u pakovanju od 5) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 20 | RSD 326,587 | RSD 1.633 |
25+ | RSD 320,056 | RSD 1.600 |
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Tehnička dokumentacija
Tehnički podaci
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
25 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
15 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.7mm
Width
4.826mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
16.51mm
Detalji o proizvodu
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.