Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Width
3.98mm
Maximum Operating Supply Voltage
5.5 V
Height
1.48mm
Maximum Operating Temperature
+85 °C
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Words
32K
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Detalji o proizvodu
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 11,26
€ 11,26 Each (bez PDV-a)
€ 13,17
€ 13,17 Each (s PDV-om)
Standard
1
€ 11,26
€ 11,26 Each (bez PDV-a)
€ 13,17
€ 13,17 Each (s PDV-om)
Standard
1
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količina | Jedinična cijena |
---|---|
1 - 9 | € 11,26 |
10+ | € 8,60 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Width
3.98mm
Maximum Operating Supply Voltage
5.5 V
Height
1.48mm
Maximum Operating Temperature
+85 °C
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Words
32K
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Detalji o proizvodu
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.