Tehnička dokumentacija
Tehnički podaci
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
600 V
Series
HiperFET, Polar3
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
16.26mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Height
21.46mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
United States
Detalji o proizvodu
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 17,952
Each (In a Tube of 30) (bez PDV-a)
KM 21,004
Each (In a Tube of 30) (s PDV-om)
30
KM 17,952
Each (In a Tube of 30) (bez PDV-a)
KM 21,004
Each (In a Tube of 30) (s PDV-om)
30
Tehnička dokumentacija
Tehnički podaci
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
600 V
Series
HiperFET, Polar3
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
16.26mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Height
21.46mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
United States
Detalji o proizvodu
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS