Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 1.5mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Provjerite ponovno kasnije.
KM 0,887
Each (In a Pack of 25) (bez PDV-a)
KM 1,038
Each (In a Pack of 25) (s PDV-om)
Standard
25
KM 0,887
Each (In a Pack of 25) (bez PDV-a)
KM 1,038
Each (In a Pack of 25) (s PDV-om)
Standard
25
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
25 - 75 | KM 0,887 | KM 22,17 |
100 - 225 | KM 0,779 | KM 19,47 |
250 - 475 | KM 0,692 | KM 17,30 |
500 - 975 | KM 0,627 | KM 15,68 |
1000+ | KM 0,606 | KM 15,14 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 1.5mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.