Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
94.6 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAIR 6 x 5
Series
SiZ998BDT
Pin Count
8
Maximum Drain Source Resistance
0.00439 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
2
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
Informacije o stanju skladišta trenutno nisu dostupne.
P.O.A.
Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay SIZ998BDT-T1-GE3
3000
P.O.A.
Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay SIZ998BDT-T1-GE3
Informacije o stanju skladišta trenutno nisu dostupne.
3000
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
94.6 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAIR 6 x 5
Series
SiZ998BDT
Pin Count
8
Maximum Drain Source Resistance
0.00439 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
2