Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Length
2.9mm
Maximum Operating Temperature
+150 °C
Width
1.3mm
Height
0.97mm
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
KM 166,24
KM 0,332 Each (Supplied on a Reel) (bez PDV-a)
KM 194,50
KM 0,389 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
500
KM 166,24
KM 0,332 Each (Supplied on a Reel) (bez PDV-a)
KM 194,50
KM 0,389 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (kolut)
500
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cijena | Po kolut |
---|---|---|
500 - 900 | KM 0,332 | KM 33,25 |
1000+ | KM 0,293 | KM 29,34 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
8 to 80mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.97mm
Length
2.9mm
Maximum Operating Temperature
+150 °C
Width
1.3mm
Height
0.97mm
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.