Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
9.15mm
Minimum Operating Temperature
-65 °C
Detalji o proizvodu
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
KM 20,05
KM 4,009 Each (In a Pack of 5) (bez PDV-a)
KM 23,46
KM 4,691 Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 20,05
KM 4,009 Each (In a Pack of 5) (bez PDV-a)
KM 23,46
KM 4,691 Each (In a Pack of 5) (s PDV-om)
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po pakovanje |
---|---|---|
5 - 20 | KM 4,009 | KM 20,05 |
25 - 45 | KM 3,872 | KM 19,36 |
50 - 120 | KM 3,638 | KM 18,19 |
125 - 245 | KM 3,403 | KM 17,02 |
250+ | KM 3,344 | KM 16,72 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
9.15mm
Minimum Operating Temperature
-65 °C
Detalji o proizvodu