Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
20 V
Package Type
MICRO FOOT
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1mm
Typical Gate Charge @ Vgs
17.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.268mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
RSD 9.406
RSD 47,029 komad (isporučivo u Reel) (bez PDV-a)
RSD 11.287
RSD 56,435 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
200
RSD 9.406
RSD 47,029 komad (isporučivo u Reel) (bez PDV-a)
RSD 11.287
RSD 56,435 komad (isporučivo u Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (kolut)
200
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cena | Po kolut |
---|---|---|
200 - 980 | RSD 47,029 | RSD 941 |
1000 - 4980 | RSD 43,11 | RSD 862 |
5000+ | RSD 41,803 | RSD 836 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
20 V
Package Type
MICRO FOOT
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1mm
Typical Gate Charge @ Vgs
17.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.268mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu