Wolfspeed SiC N-Channel MOSFET, 90 A, 1200 V, 3-Pin TO-247 C2M0025120D
Tehnička dokumentacija
Tehnički podaci
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
463 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Width
21.1mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
16.13mm
Typical Gate Charge @ Vgs
161 nC @ 20 V
Maximum Operating Temperature
+150 °C
Height
5.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.3V
Zemlja podrijetla
China
Detalji o proizvodu
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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€ 140,00
€ 140,00 komadno (isporučuje se u cijevi) (bez PDV-a)
€ 163,80
€ 163,80 komadno (isporučuje se u cijevi) (s PDV-om)
Proizvodno pakovanje (cijev)
1
€ 140,00
€ 140,00 komadno (isporučuje se u cijevi) (bez PDV-a)
€ 163,80
€ 163,80 komadno (isporučuje se u cijevi) (s PDV-om)
Proizvodno pakovanje (cijev)
1
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Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
463 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Width
21.1mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
16.13mm
Typical Gate Charge @ Vgs
161 nC @ 20 V
Maximum Operating Temperature
+150 °C
Height
5.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.3V
Zemlja podrijetla
China
Detalji o proizvodu
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda