Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
PowerDI 5
Maximum Continuous Forward Current
5A
Peak Reverse Repetitive Voltage
100V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
890mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
120A
Zemlja podrijetla
China
Detalji o proizvodu
Schottky Barrier Diodes, 2A to 9A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 3,872
Each (Supplied on a Reel) (bez PDV-a)
KM 4,53
Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
50
KM 3,872
Each (Supplied on a Reel) (bez PDV-a)
KM 4,53
Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
50
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
50 - 245 | KM 3,872 | KM 19,36 |
250 - 1245 | KM 3,504 | KM 17,52 |
1250 - 2495 | KM 3,115 | KM 15,57 |
2500+ | KM 2,639 | KM 13,19 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
PowerDI 5
Maximum Continuous Forward Current
5A
Peak Reverse Repetitive Voltage
100V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
890mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
120A
Zemlja podrijetla
China
Detalji o proizvodu
Schottky Barrier Diodes, 2A to 9A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.