Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
100 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.77mm
Width
2.41mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.01mm
Detalji o proizvodu
P-Channel MOSFET, 100V to 450V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 1,925
Each (Supplied as a Tape) (bez PDV-a)
KM 2,252
Each (Supplied as a Tape) (s PDV-om)
Proizvodno pakovanje (traka)
50
KM 1,925
Each (Supplied as a Tape) (bez PDV-a)
KM 2,252
Each (Supplied as a Tape) (s PDV-om)
Proizvodno pakovanje (traka)
50
Kupujte na veliko
količina | Jedinična cijena | Po traka |
---|---|---|
50 - 95 | KM 1,925 | KM 9,62 |
100 - 495 | KM 1,557 | KM 7,79 |
500 - 995 | KM 1,428 | KM 7,14 |
1000+ | KM 1,341 | KM 6,70 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
100 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.77mm
Width
2.41mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.01mm
Detalji o proizvodu