Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Series
SIPMOS
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Number of Elements per Chip
1
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Detalji o proizvodu
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 0,324
Each (On a Reel of 500) (bez PDV-a)
KM 0,379
Each (On a Reel of 500) (s PDV-om)
500
KM 0,324
Each (On a Reel of 500) (bez PDV-a)
KM 0,379
Each (On a Reel of 500) (s PDV-om)
500
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
500 - 500 | KM 0,324 | KM 162,22 |
1000 - 2000 | KM 0,26 | KM 129,77 |
2500+ | KM 0,238 | KM 118,96 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Series
SIPMOS
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Number of Elements per Chip
1
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Detalji o proizvodu
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.