Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
580 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
2 kW
Package Type
AG-62MM-1
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Transistor Configuration
Series
Dimensions
106.4 x 61.4 x 30.9mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Detalji o proizvodu
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 41.673
Each (bez PDV-a)
RSD 50.007
Each (s PDV-om)
1
RSD 41.673
Each (bez PDV-a)
RSD 50.007
Each (s PDV-om)
1
Kupujte na veliko
količina | Jedinična cena |
---|---|
1 - 1 | RSD 41.673 |
2 - 4 | RSD 40.236 |
5+ | RSD 40.105 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
580 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
2 kW
Package Type
AG-62MM-1
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Transistor Configuration
Series
Dimensions
106.4 x 61.4 x 30.9mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Detalji o proizvodu
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.