Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
240 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
D2PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
290 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
200 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.83mm
Detalji o proizvodu
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 9,625
Each (Supplied on a Reel) (bez PDV-a)
KM 11,261
Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
20
KM 9,625
Each (Supplied on a Reel) (bez PDV-a)
KM 11,261
Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
20
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
20 - 48 | KM 9,625 | KM 19,25 |
50 - 98 | KM 9,409 | KM 18,82 |
100 - 198 | KM 9,084 | KM 18,17 |
200+ | KM 8,652 | KM 17,30 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
240 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
D2PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
290 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
200 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.83mm
Detalji o proizvodu
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.