Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
170 mA, 330 mA
Maximum Drain Source Voltage
50 V, 60 V
Package Type
SOT-666
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3.6 Ω, 13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V, 0.5 nC @ 4.5 V
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Detalji o proizvodu
Dual N/P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 0,887
Each (Supplied on a Reel) (bez PDV-a)
KM 1,038
Each (Supplied on a Reel) (s PDV-om)
50
KM 0,887
Each (Supplied on a Reel) (bez PDV-a)
KM 1,038
Each (Supplied on a Reel) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
50 - 100 | KM 0,887 | KM 44,34 |
150+ | KM 0,541 | KM 27,04 |
Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
170 mA, 330 mA
Maximum Drain Source Voltage
50 V, 60 V
Package Type
SOT-666
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3.6 Ω, 13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V, 0.5 nC @ 4.5 V
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Detalji o proizvodu