Tehnička dokumentacija
Tehnički podaci
Brand
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
298 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.67 x 11.33 x 4.83mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Provjerite ponovno kasnije.
KM 12,761
Each (Supplied on a Reel) (bez PDV-a)
KM 14,93
Each (Supplied on a Reel) (s PDV-om)
2
KM 12,761
Each (Supplied on a Reel) (bez PDV-a)
KM 14,93
Each (Supplied on a Reel) (s PDV-om)
2
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
2 - 6 | KM 12,761 | KM 25,52 |
8 - 38 | KM 11,463 | KM 22,93 |
40 - 198 | KM 10,598 | KM 21,20 |
200 - 398 | KM 9,517 | KM 19,03 |
400+ | KM 8,652 | KM 17,30 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
298 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.67 x 11.33 x 4.83mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.