Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
6.35mm
Detalji o proizvodu
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
P.O.A.
Each (In a Pack of 10) (bez PDV-a)
Standard
10
P.O.A.
Each (In a Pack of 10) (bez PDV-a)
Standard
10
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Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
6.35mm
Detalji o proizvodu