Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
63 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
9.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
98 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
4.6mm
Zemlja podrijetla
China
Detalji o proizvodu
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
€ 14,76
€ 14,76 Each (bez PDV-a)
€ 17,27
€ 17,27 Each (s PDV-om)
Standard
1
€ 14,76
€ 14,76 Each (bez PDV-a)
€ 17,27
€ 17,27 Each (s PDV-om)
Standard
1
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količina | Jedinična cijena |
---|---|
1 - 4 | € 14,76 |
5 - 9 | € 14,23 |
10 - 24 | € 13,34 |
25 - 49 | € 12,51 |
50+ | € 12,32 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
63 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
9.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
98 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
4.6mm
Zemlja podrijetla
China
Detalji o proizvodu
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.