Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.41mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Width
4.7mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
9.01mm
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 5,948
Each (In a Tube of 50) (bez PDV-a)
KM 6,959
Each (In a Tube of 50) (s PDV-om)
50
KM 5,948
Each (In a Tube of 50) (bez PDV-a)
KM 6,959
Each (In a Tube of 50) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cijena | Po cijev |
---|---|---|
50 - 50 | KM 5,948 | KM 297,40 |
100 - 200 | KM 5,732 | KM 286,58 |
250+ | KM 5,624 | KM 281,18 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.41mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Width
4.7mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
9.01mm
Zemlja podrijetla
China
Detalji o proizvodu