Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.55mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 1,947
Each (Supplied on a Reel) (bez PDV-a)
KM 2,278
Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
20
KM 1,947
Each (Supplied on a Reel) (bez PDV-a)
KM 2,278
Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
20
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
20 - 80 | KM 1,947 | KM 38,93 |
100 - 180 | KM 1,579 | KM 31,58 |
200 - 980 | KM 1,557 | KM 31,15 |
1000+ | KM 1,514 | KM 30,28 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.55mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu