Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Series
DeepGate, STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.75mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
KM 22,02
KM 11,011 Each (In a Pack of 2) (bez PDV-a)
KM 25,76
KM 12,883 Each (In a Pack of 2) (s PDV-om)
Standard
2
KM 22,02
KM 11,011 Each (In a Pack of 2) (bez PDV-a)
KM 25,76
KM 12,883 Each (In a Pack of 2) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
2
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cijena | Po pakovanje |
---|---|---|
2 - 8 | KM 11,011 | KM 22,02 |
10+ | KM 10,816 | KM 21,63 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Series
DeepGate, STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.75mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.