Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2300000 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Number of Elements per Chip
1
Transistor Material
Si
KM 3.520,44
KM 1,408 Each (On a Reel of 2500) (bez PDV-a)
KM 4.118,91
KM 1,647 Each (On a Reel of 2500) (s PDV-om)
2500
KM 3.520,44
KM 1,408 Each (On a Reel of 2500) (bez PDV-a)
KM 4.118,91
KM 1,647 Each (On a Reel of 2500) (s PDV-om)
2500
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Tehnička dokumentacija
Tehnički podaci
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2300000 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Number of Elements per Chip
1
Transistor Material
Si