Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
DO-214AA (SMB)
Maximum Continuous Forward Current
1A
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
700mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
430A
Detalji o proizvodu
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
RSD 1.078
RSD 43,11 komadno (u pakovanju od 25) (bez PDV-a)
RSD 1.293
RSD 51,732 komadno (u pakovanju od 25) (s PDV-om)
Standard
25
RSD 1.078
RSD 43,11 komadno (u pakovanju od 25) (bez PDV-a)
RSD 1.293
RSD 51,732 komadno (u pakovanju od 25) (s PDV-om)
Standard
25
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po pakovanje |
---|---|---|
25 - 100 | RSD 43,11 | RSD 1.078 |
125 - 725 | RSD 23,514 | RSD 588 |
750 - 1475 | RSD 19,595 | RSD 490 |
1500+ | RSD 18,289 | RSD 457 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
DO-214AA (SMB)
Maximum Continuous Forward Current
1A
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
700mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
430A
Detalji o proizvodu
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.