Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
900 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
890 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.25mm
Length
1.25mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.48mm
Zemlja podrijetla
China
KM 410,72
KM 0,137 Each (On a Reel of 3000) (bez PDV-a)
KM 480,54
KM 0,16 Each (On a Reel of 3000) (s PDV-om)
3000
KM 410,72
KM 0,137 Each (On a Reel of 3000) (bez PDV-a)
KM 480,54
KM 0,16 Each (On a Reel of 3000) (s PDV-om)
3000
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Provjerite ponovno kasnije.
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
900 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
890 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.25mm
Length
1.25mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.48mm
Zemlja podrijetla
China