Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
60 V
Series
IntelliFET
Package Type
SM
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.13 W
Transistor Configuration
Isolated
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Maximum Operating Temperature
+125 °C
Width
3.95mm
Height
1.5mm
Minimum Operating Temperature
-40 °C
Zemlja podrijetla
Germany
Detalji o proizvodu
IntelliFET Self-protected MOSFETs, Diodes Inc
IntelliFET are self-protected MOSFETs that integrate a complete array of protection circuits that guard against ESD (Electrostatic Sensitive Device), over-current, over-voltage, and over-temperature conditions.
MOSFET Transistors, Diodes Inc.
KM 17,41
KM 3,481 Each (In a Pack of 5) (bez PDV-a)
KM 20,37
KM 4,073 Each (In a Pack of 5) (s PDV-om)
Standard
5
KM 17,41
KM 3,481 Each (In a Pack of 5) (bez PDV-a)
KM 20,37
KM 4,073 Each (In a Pack of 5) (s PDV-om)
Standard
5
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Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
60 V
Series
IntelliFET
Package Type
SM
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.13 W
Transistor Configuration
Isolated
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Maximum Operating Temperature
+125 °C
Width
3.95mm
Height
1.5mm
Minimum Operating Temperature
-40 °C
Zemlja podrijetla
Germany
Detalji o proizvodu
IntelliFET Self-protected MOSFETs, Diodes Inc
IntelliFET are self-protected MOSFETs that integrate a complete array of protection circuits that guard against ESD (Electrostatic Sensitive Device), over-current, over-voltage, and over-temperature conditions.