Infineon OptiMOS™ Dual N/P-Channel-Channel MOSFET, 1.5 A, 20 V, 6-Pin TSOP-6 BSL215CH6327XTSA1
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
20 V
Series
OptiMOS™
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
250 mΩ, 280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.6 V, 1.2V
Minimum Gate Threshold Voltage
0.7 V, 1.2V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.6mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.9mm
Typical Gate Charge @ Vgs
0.73 nC @ 4.5 V, 3 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Detalji o proizvodu
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
KM 49,29
KM 0,821 Each (Supplied on a Reel) (bez PDV-a)
KM 57,67
KM 0,961 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
60
KM 49,29
KM 0,821 Each (Supplied on a Reel) (bez PDV-a)
KM 57,67
KM 0,961 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
60
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
20 V
Series
OptiMOS™
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
250 mΩ, 280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.6 V, 1.2V
Minimum Gate Threshold Voltage
0.7 V, 1.2V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.6mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.9mm
Typical Gate Charge @ Vgs
0.73 nC @ 4.5 V, 3 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Detalji o proizvodu
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda