Infineon OptiMOS™ 3 N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 FP IPA093N06N3GXKSA1

RS kataloški broj:: 165-8110brend: InfineonProizvođački broj:: IPA093N06N3GXKSA1
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220 FP

Series

OptiMOS™ 3

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

36 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

10.65mm

Number of Elements per Chip

1

Width

4.85mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

16.15mm

Zemlja podrijetla

China

Detalji o proizvodu

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

RSD 7.446

RSD 148,924 komad (u Tubi od 50) (bez PDV-a)

RSD 8.935

RSD 178,709 komad (u Tubi od 50) (s PDV-om)

Infineon OptiMOS™ 3 N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 FP IPA093N06N3GXKSA1

50

Dostupno u više komada 50
50RSD 7.446
100RSD 11.627
150RSD 17.440
200RSD 23.253
250RSD 29.066
300RSD 34.880
350RSD 40.693
400RSD 46.506
450RSD 52.319
500RSD 58.133
550RSD 63.946
600RSD 69.759
650RSD 75.572
700RSD 81.386
750RSD 87.199

RSD 7.446

RSD 148,924 komad (u Tubi od 50) (bez PDV-a)

RSD 8.935

RSD 178,709 komad (u Tubi od 50) (s PDV-om)

Infineon OptiMOS™ 3 N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 FP IPA093N06N3GXKSA1
Informacije o stanju skladišta trenutno nisu dostupne.

50

Dostupno u više komada 50
50RSD 7.446
100RSD 11.627
150RSD 17.440
200RSD 23.253
250RSD 29.066
300RSD 34.880
350RSD 40.693
400RSD 46.506
450RSD 52.319
500RSD 58.133
550RSD 63.946
600RSD 69.759
650RSD 75.572
700RSD 81.386
750RSD 87.199

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količinaJedinična cenaPo cev
50 - 50RSD 148,924RSD 7.446
100+RSD 116,265RSD 5.813

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
Možda će vas interesovati

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220 FP

Series

OptiMOS™ 3

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

36 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

10.65mm

Number of Elements per Chip

1

Width

4.85mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

16.15mm

Zemlja podrijetla

China

Detalji o proizvodu

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
Možda će vas interesovati