Infineon OptiMOS™ 3 N-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK-7 IPB011N04NGATMA1

RS kataloški broj:: 145-9552robna marka: InfineonProizvođački broj:: IPB011N04NGATMA1
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS™ 3

Package Type

D2PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1.1 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

188 nC @ 10 V

Width

9.45mm

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Zemlja podrijetla

China

Detalji o proizvodu

Infineon OptiMOS™3 Power MOSFETs, up to 40V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

KM 4.244,09

KM 4,244 Each (On a Reel of 1000) (bez PDV-a)

KM 4.965,58

KM 4,965 Each (On a Reel of 1000) (s PDV-om)

Infineon OptiMOS™ 3 N-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK-7 IPB011N04NGATMA1

1000

Dostupno u više komada 1000
1000KM 4.244,09
2000KM 8.488,17
3000KM 12.732,26
4000KM 16.976,34
5000KM 21.220,43
6000KM 25.464,52
7000KM 29.708,60
8000KM 33.952,69
9000KM 38.196,77
10000KM 42.440,86
11000KM 46.684,95
12000KM 50.929,03
13000KM 55.173,12
14000KM 59.417,20
15000KM 63.661,29

KM 4.244,09

KM 4,244 Each (On a Reel of 1000) (bez PDV-a)

KM 4.965,58

KM 4,965 Each (On a Reel of 1000) (s PDV-om)

Infineon OptiMOS™ 3 N-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK-7 IPB011N04NGATMA1
Informacije o stanju skladišta trenutno nisu dostupne.

1000

Dostupno u više komada 1000
1000KM 4.244,09
2000KM 8.488,17
3000KM 12.732,26
4000KM 16.976,34
5000KM 21.220,43
6000KM 25.464,52
7000KM 29.708,60
8000KM 33.952,69
9000KM 38.196,77
10000KM 42.440,86
11000KM 46.684,95
12000KM 50.929,03
13000KM 55.173,12
14000KM 59.417,20
15000KM 63.661,29

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS™ 3

Package Type

D2PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1.1 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

188 nC @ 10 V

Width

9.45mm

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Zemlja podrijetla

China

Detalji o proizvodu

Infineon OptiMOS™3 Power MOSFETs, up to 40V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više