Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC IRF7389TRPBF
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
5.3 A, 7.3 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
46 mΩ, 98 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Length
5mm
Typical Gate Charge @ Vgs
22 nC @ 10 V, 23 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Width
4mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 2.280,00
€ 0,57 komadno (u namotaju od 4000) (bez PDV-a)
€ 2.667,60
€ 0,667 komadno (u namotaju od 4000) (s PDV-om)
4000
€ 2.280,00
€ 0,57 komadno (u namotaju od 4000) (bez PDV-a)
€ 2.667,60
€ 0,667 komadno (u namotaju od 4000) (s PDV-om)
4000
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Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
5.3 A, 7.3 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
46 mΩ, 98 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Length
5mm
Typical Gate Charge @ Vgs
22 nC @ 10 V, 23 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Width
4mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda