Infineon HEXFET N-Channel MOSFET, 246 A, 75 V, 3-Pin D2PAK IRFS7730TRLPBF

RS kataloški broj:: 130-1007Pbrend: InfineonProizvođački broj:: IRFS7730TRLPBF
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

246 A

Maximum Drain Source Voltage

75 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

271 nC @ 10 V

Width

9.65mm

Height

4.83mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalji o proizvodu

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

RSD 5.421

RSD 542,135 komad (isporučivo u Reel) (bez PDV-a)

RSD 6.506

RSD 650,562 komad (isporučivo u Reel) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 246 A, 75 V, 3-Pin D2PAK IRFS7730TRLPBF
Odaberite vrstu pakovanja

Proizvodno pakovanje (kolut)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 2
10RSD 5.421
12RSD 6.506
14RSD 7.590
16RSD 8.674
18RSD 9.758
20RSD 10.190
22RSD 11.208
24RSD 12.227
26RSD 13.246
28RSD 14.265
30RSD 15.284
32RSD 16.303
34RSD 17.322
36RSD 18.341
38RSD 19.360

RSD 5.421

RSD 542,135 komad (isporučivo u Reel) (bez PDV-a)

RSD 6.506

RSD 650,562 komad (isporučivo u Reel) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 246 A, 75 V, 3-Pin D2PAK IRFS7730TRLPBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Proizvodno pakovanje (kolut)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 2
10RSD 5.421
12RSD 6.506
14RSD 7.590
16RSD 8.674
18RSD 9.758
20RSD 10.190
22RSD 11.208
24RSD 12.227
26RSD 13.246
28RSD 14.265
30RSD 15.284
32RSD 16.303
34RSD 17.322
36RSD 18.341
38RSD 19.360

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količinaJedinična cenaPo kolut
10 - 18RSD 542,135RSD 1.084
20 - 48RSD 509,476RSD 1.019
50 - 98RSD 476,817RSD 954
100+RSD 470,286RSD 941

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

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design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

246 A

Maximum Drain Source Voltage

75 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

271 nC @ 10 V

Width

9.65mm

Height

4.83mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalji o proizvodu

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više