Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB IRLB4030PBF
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
370 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
87 nC @ 4.5 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+175 °C
Height
9.02mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
KM 19,60
KM 9,799 Each (In a Pack of 2) (bez PDV-a)
KM 22,93
KM 11,465 Each (In a Pack of 2) (s PDV-om)
2
KM 19,60
KM 9,799 Each (In a Pack of 2) (bez PDV-a)
KM 22,93
KM 11,465 Each (In a Pack of 2) (s PDV-om)
2
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 2 - 18 | KM 9,799 | KM 19,60 |
| 20 - 48 | KM 8,449 | KM 16,90 |
| 50 - 98 | KM 8,293 | KM 16,59 |
| 100 - 198 | KM 7,96 | KM 15,92 |
| 200+ | KM 7,725 | KM 15,45 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
370 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
87 nC @ 4.5 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+175 °C
Height
9.02mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda