Infineon SIPMOS® P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1

RS kataloški broj:: 124-8828robna marka: InfineonProizvođački broj:: SPP80P06PHXKSA1
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

340 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

115 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.57mm

Transistor Material

Si

Forward Diode Voltage

1.6V

Height

15.95mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

Malaysia

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

KM 384,31

KM 7,686 Each (In a Tube of 50) (bez PDV-a)

KM 449,64

KM 8,993 Each (In a Tube of 50) (s PDV-om)

Infineon SIPMOS® P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1

50

Dostupno u više komada 50
50KM 384,31
100KM 639,55
150KM 959,32
200KM 1.279,09
250KM 1.564,64
300KM 1.877,57
350KM 2.190,50
400KM 2.503,42
450KM 2.816,35
500KM 3.129,28
550KM 3.442,21
600KM 3.755,14
650KM 4.068,06
700KM 4.380,99
750KM 4.693,92

KM 384,31

KM 7,686 Each (In a Tube of 50) (bez PDV-a)

KM 449,64

KM 8,993 Each (In a Tube of 50) (s PDV-om)

Infineon SIPMOS® P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1
Informacije o stanju skladišta trenutno nisu dostupne.

50

Dostupno u više komada 50
50KM 384,31
100KM 639,55
150KM 959,32
200KM 1.279,09
250KM 1.564,64
300KM 1.877,57
350KM 2.190,50
400KM 2.503,42
450KM 2.816,35
500KM 3.129,28
550KM 3.442,21
600KM 3.755,14
650KM 4.068,06
700KM 4.380,99
750KM 4.693,92

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

količinaJedinična cijenaPo cijev
50 - 50KM 7,686KM 384,31
100 - 200KM 6,395KM 319,77
250+KM 6,259KM 312,93

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

340 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

115 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.57mm

Transistor Material

Si

Forward Diode Voltage

1.6V

Height

15.95mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

Malaysia

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više