IXYS Linear N-Channel MOSFET, 12 A, 1000 V, 3-Pin TO-247 IXTH12N100L
Tehnička dokumentacija
Tehnički podaci
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
1000 V
Series
Linear
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
5.3mm
Length
16.26mm
Typical Gate Charge @ Vgs
155 nC @ 20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
21.46mm
Zemlja podrijetla
Germany
Detalji o proizvodu
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Zamisliti. Stvoriti. Surađivati
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€ 792,00
€ 26,40 Each (In a Tube of 30) (bez PDV-a)
€ 926,64
€ 30,888 Each (In a Tube of 30) (s PDV-om)
30
€ 792,00
€ 26,40 Each (In a Tube of 30) (bez PDV-a)
€ 926,64
€ 30,888 Each (In a Tube of 30) (s PDV-om)
30
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Provjerite ponovno kasnije.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
1000 V
Series
Linear
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
5.3mm
Length
16.26mm
Typical Gate Charge @ Vgs
155 nC @ 20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
21.46mm
Zemlja podrijetla
Germany
Detalji o proizvodu
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda