Tehnička dokumentacija
Tehnički podaci
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
25 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
15 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.7mm
Width
4.826mm
Maximum Operating Temperature
+150 °C
Height
16.51mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
€ 12,30
€ 2,46 Each (In a Pack of 5) (bez PDV-a)
€ 14,39
€ 2,878 Each (In a Pack of 5) (s PDV-om)
Standard
5
€ 12,30
€ 2,46 Each (In a Pack of 5) (bez PDV-a)
€ 14,39
€ 2,878 Each (In a Pack of 5) (s PDV-om)
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po pakovanje |
---|---|---|
5 - 20 | € 2,46 | € 12,30 |
25+ | € 2,43 | € 12,15 |
Tehnička dokumentacija
Tehnički podaci
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
25 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
15 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.7mm
Width
4.826mm
Maximum Operating Temperature
+150 °C
Height
16.51mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.