onsemi N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000

RS kataloški broj:: 671-4733brend: onsemiProizvođački broj:: 2N7000
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Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

4.19mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.2mm

Height

5.33mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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RSD 1.332

RSD 66,624 komadno (u pakovanju od 20) (bez PDV-a)

RSD 1.599

RSD 79,949 komadno (u pakovanju od 20) (s PDV-om)

onsemi N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000
Odaberite vrstu pakovanja

RSD 1.332

RSD 66,624 komadno (u pakovanju od 20) (bez PDV-a)

RSD 1.599

RSD 79,949 komadno (u pakovanju od 20) (s PDV-om)

onsemi N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količinaJedinična cenaPo pakovanje
20 - 180RSD 66,624RSD 1.332
200 - 480RSD 58,786RSD 1.176
500 - 980RSD 53,56RSD 1.071
1000 - 1980RSD 48,335RSD 967
2000+RSD 45,722RSD 914

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

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design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
Možda će vas interesovati

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

4.19mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.2mm

Height

5.33mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
Možda će vas interesovati