onsemi SuperFET N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK FCD7N60TM

RS kataloški broj:: 903-4131Pbrend: onsemiProizvođački broj:: FCD7N60TM
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Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

600 V

Series

SuperFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

6.73mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

6.22mm

Transistor Material

Si

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Detalji o proizvodu

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor

Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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RSD 1.960

RSD 391,905 komad (isporučivo u Reel) (bez PDV-a)

RSD 2.351

RSD 470,286 komad (isporučivo u Reel) (s PDV-om)

onsemi SuperFET N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK FCD7N60TM
Odaberite vrstu pakovanja

RSD 1.960

RSD 391,905 komad (isporučivo u Reel) (bez PDV-a)

RSD 2.351

RSD 470,286 komad (isporučivo u Reel) (s PDV-om)

onsemi SuperFET N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK FCD7N60TM
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

600 V

Series

SuperFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

6.73mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

6.22mm

Transistor Material

Si

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Detalji o proizvodu

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor

Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više