Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 40mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
12 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
85pF
Source Gate On-Capacitance
85pF
Dimensions
4.58 x 3.86 x 4.58mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
4.58mm
Height
4.58mm
Width
3.86mm
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
RSD 1.862
RSD 74,462 komadno (u pakovanju od 25) (bez PDV-a)
RSD 2.234
RSD 89,354 komadno (u pakovanju od 25) (s PDV-om)
Standard
25
RSD 1.862
RSD 74,462 komadno (u pakovanju od 25) (bez PDV-a)
RSD 2.234
RSD 89,354 komadno (u pakovanju od 25) (s PDV-om)
Standard
25
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
količina | Jedinična cena | Po pakovanje |
---|---|---|
25 - 75 | RSD 74,462 | RSD 1.862 |
100 - 225 | RSD 65,317 | RSD 1.633 |
250 - 475 | RSD 58,786 | RSD 1.470 |
500+ | RSD 53,56 | RSD 1.339 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 40mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
12 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
85pF
Source Gate On-Capacitance
85pF
Dimensions
4.58 x 3.86 x 4.58mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
4.58mm
Height
4.58mm
Width
3.86mm
Detalji o proizvodu
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.