Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
5 to 30mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
14pF
Source Gate On-Capacitance
14pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Width
1.4mm
Detalji o proizvodu
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 150,00
€ 0,30 komadno (isporučuje se u namotaju) (bez PDV-a)
€ 175,50
€ 0,351 komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
500
€ 150,00
€ 0,30 komadno (isporučuje se u namotaju) (bez PDV-a)
€ 175,50
€ 0,351 komadno (isporučuje se u namotaju) (s PDV-om)
Proizvodno pakovanje (kolut)
500
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po kolut |
---|---|---|
500 - 950 | € 0,30 | € 15,00 |
1000+ | € 0,27 | € 13,50 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
5 to 30mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
14pF
Source Gate On-Capacitance
14pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Width
1.4mm
Detalji o proizvodu
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.