onsemi Dual N/P-Channel MOSFET, 340 mA, 510 mA, 60 V, 6-Pin SOT-23 NDC7001C

RS kataloški broj:: 761-4574brend: onsemiProizvođački broj:: NDC7001C
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Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

340 mA, 510 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

4 Ω, 10 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

960 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

2

Length

3mm

Typical Gate Charge @ Vgs

1.1 nC @ 10 V, 1.6 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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RSD 705

RSD 70,543 komadno (u pakovanju od 10) (bez PDV-a)

RSD 847

RSD 84,652 komadno (u pakovanju od 10) (s PDV-om)

onsemi Dual N/P-Channel MOSFET, 340 mA, 510 mA, 60 V, 6-Pin SOT-23 NDC7001C
Odaberite vrstu pakovanja

RSD 705

RSD 70,543 komadno (u pakovanju od 10) (bez PDV-a)

RSD 847

RSD 84,652 komadno (u pakovanju od 10) (s PDV-om)

onsemi Dual N/P-Channel MOSFET, 340 mA, 510 mA, 60 V, 6-Pin SOT-23 NDC7001C
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količinaJedinična cenaPo pakovanje
10 - 90RSD 70,543RSD 705
100 - 240RSD 61,398RSD 614
250 - 490RSD 54,867RSD 549
500 - 990RSD 50,948RSD 509
1000+RSD 48,335RSD 483

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

340 mA, 510 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

4 Ω, 10 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

960 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

2

Length

3mm

Typical Gate Charge @ Vgs

1.1 nC @ 10 V, 1.6 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više